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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 IXBH6N170 $10.69 | IXYS | IGBT 1700V 12A TO-247AD | Tube | TO-247AD | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1600V 9A TO-247AD | Tube | TO-247AD | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
 IXBK55N300 $85.86 | IXYS | IGBT 3000V 130A TO-264AA | Tube | TO-264AA | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
IXBK64N250 $123.28 | IXYS | IGBT 2500V 75A TO-264AA | Tube | TO-264AA | Through Hole | - | - |
IXBK75N170 $41.92 | IXYS | IGBT 1700V 200A TO-264AA | Tube | TO-264AA | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1700V 110A TO-264AA | Tube | TO-264AA | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 3600V 92A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) | |
 IXBL64N250 $90.79 | IXYS | IGBT 2500V 116A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | BIMOSFET™ | -55°C ~ 150°C (TJ) |
