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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 1200V 38A TO-263HVTape & Reel (TR)TO-263HVSurface MountXPT™-
IXYSIGBT PT 1200V 38A TO-263HVTubeTO-263HVSurface MountXPT™-
IXYSIGBT PT 1200V 38A TO-247ADTubeTO-247ADThrough Hole--40°C ~ 150°C (TJ)
IXYSIGBT H BRIDGE 1200V 32A SMPDTape & Reel (TR)ISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT H BRIDGE 1200V 32A SMPDTubeISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 32A ISOPLUS-SMPDTape & Reel (TR)ISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT PT 1200V 32A ISOPLUS-SMPDTubeISOPLUS-SMPD™.BSurface Mount--55°C ~ 150°C (TJ)
IXYSIGBT MOD 1200V 43A ISOPLUS247TubeISOPLUS247™Through Hole--40°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added