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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXGN60N60 $13.05 | IXYS | IGBT MOD 600V 100A 250W SOT227B | Bulk | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT MOD 600V 75A 480W SOT227B | Tube | SOT-227B | Chassis Mount | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 75A 480W SOT227B | Tube | SOT-227B | Chassis Mount | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGN72N60A3 $11.59 | IXYS | IGBT MOD 600V 160A 360W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGN72N60C3H1 $25.28 | IXYS | IGBT MOD 600V 78A 360W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT MOD 1200V 145A 595W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) | |
![]() IXGN82N120C3H1 $32.24 | IXYS | IGBT MOD 1200V 130A 595W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 600V 20A TO-220-3 | Tube | TO-220-3 | Through Hole | - | - |

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