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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXGN120N60A3 $14.61 | IXYS | IGBT MOD 600V 200A 595W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGN120N60A3D1 $16.86 | IXYS | IGBT MOD 600V 200A 595W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGN200N170 $47.89 | IXYS | IGBT 1700V 280A SOT-227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT MOD 600V 200A 600W SOT227B | Tube | SOT-227B | Chassis Mount | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 200A 600W SOT227B | Tube | SOT-227B | Chassis Mount | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 200A 700W SOT227B | Tube | SOT-227B | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT MOD 600V 200A 600W SOT227B | Tube | SOT-227B | Chassis Mount | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
![]() IXGN200N60B3 $47.80 | IXYS | IGBT MOD 600V 300A 830W SOT227B | Tube | SOT-227B | Chassis Mount | GenX3™ | -55°C ~ 150°C (TJ) |

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