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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT MOD 600V 200A 595W SOT227BTubeSOT-227BChassis MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 595W SOT227BTubeSOT-227BChassis MountGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 1700V 280A SOT-227BTubeSOT-227BChassis Mount--55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 600W SOT227BTubeSOT-227BChassis MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 600W SOT227BTubeSOT-227BChassis MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 700W SOT227BTubeSOT-227BChassis Mount--55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 200A 600W SOT227BTubeSOT-227BChassis MountHiPerFAST™-55°C ~ 150°C (TJ)
IXYSIGBT MOD 600V 300A 830W SOT227BTubeSOT-227BChassis MountGenX3™-55°C ~ 150°C (TJ)
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