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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() IXGK72N60A3H1 $6.84 | IXYS | IGBT PT 600V 75A TO-264 | Tube | TO-264 (IXGK) | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGK72N60B3H1 $8.65 | IXYS | IGBT PT 600V 75A TO-264 | Tube | TO-264 (IXGK) | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGK75N250 $92.24 | IXYS | IGBT NPT 2500V 170A TO-264 | Tube | TO-264 (IXGK) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() IXGK82N120A3 $29.14 | IXYS | IGBT PT 1200V 260A TO-264 | Tube | TO-264 (IXGK) | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGK82N120B3 $24.19 | IXYS | IGBT PT 1200V 230A TO-264 | Tube | TO-264 (IXGK) | Through Hole | GenX3™ | -55°C ~ 150°C (TJ) |
![]() IXGL75N250 $90.79 | IXYS | IGBT 2500V 110A ISOPLUSI5-PAK | Tube | ISOPLUSi5-Pak™ | Through Hole | - | -55°C ~ 150°C (TJ) |
| IXYS | IGBT 1000V 34A TO-204AE | Tube | TO-204AE | Through Hole | - | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT 600V 40A TO-204AE | Tube | TO-204AE | Through Hole | - | -55°C ~ 150°C (TJ) |

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