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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT 1000V 30A TO-220-3 | Tube | TO-220-3 | Through Hole | Lightspeed™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1200V 30A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
 IXGP15N120C $2.75 | IXYS | IGBT 1200V 30A TO-220-3 | Tube | TO-220-3 | Through Hole | Lightspeed™ | -55°C ~ 150°C (TJ) |
| IXYS | IGBT PT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 600V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | HiPerFAST™ | -55°C ~ 150°C (TJ) | |
| IXYS | IGBT PT 1000V 40A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
