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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT PT 600V 60A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 60A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 300V TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 120A TO-220TubeTO-220Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 48A TO-220TubeTO-220Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 75A TO-220-3TubeTO-220-3Through HoleGenX3™-55°C ~ 150°C (TJ)
IXYSIGBT 1000V 8A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
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