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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
IXYSIGBT 300V 240A TO-3PTubeTO-3PThrough HolePolar™-55°C ~ 150°C (TJ)
IXYSIGBT 1200V 50A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 100A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT PT 600V 90A TO-3PTubeTO-3PThrough Hole--55°C ~ 150°C (TJ)
IXYSIGBT 330V 85A 150W TO3PTubeTO-3PThrough HolePolar™-55°C ~ 150°C (TJ)
IXYSIGBT 270V 90A 150W TO3PTubeTO-3PThrough HolePolar™-55°C ~ 150°C (TJ)
IXYSIGBT TRENCH 330V 90A TO-3PTubeTO-3PThrough Hole--
IXYSIGBT PT 600V 156A ISOPLUS247TubeISOPLUS247™Through HoleHiPerFAST™-55°C ~ 150°C (TJ)
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