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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM15-CEA | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) | |
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM13-CGA | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) | |
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM15-CEC | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) | |
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM15-CEA | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) | |
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM15-CFA | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) | |
| onsemi | MODULE | Bulk | AHPM15-CEC | Through Hole | - | -40°C ~ 175°C (TJ) | |
| onsemi | IC PWR MOD 750V 800A AHPM15 | Tube | AHPM15-CEA | Through Hole | - | -40°C ~ 175°C (TJ) | |
 NVH640S75L4SPB $382.76 | onsemi | AUTOMOTIVE 750V, 640A SSDC POWER | Bulk | SSDC33 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
