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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NVH950S75L4SPC $538.52 | onsemi | AUTOMOTIVE 750V, 950A SSDC POWER | Bulk | SSDC33 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH027B120MNF2PTG $242.10 | onsemi | IGBT MODULE 1200V | Tape & Reel (TR),Cut Tape (CT) | - | - | - | - |
![]() NXH100B120H3Q0PG $57.16 | onsemi | PIM 60-80KW Q0BOOST-L57 1200V, 1 | Tray | 22-PIM (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH100B120H3Q0PTG $57.16 | onsemi | IGBT MODULE 1200V 50A 186W 22PIM | Tray | 22-PIM (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH100B120H3Q0SG $57.16 | onsemi | PIM 60-80KW Q0BOOST-L57 1200V, 1 | Tray | 22-PIM/Q0BOOST (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH100B120H3Q0STG $45.73 | onsemi | IGBT MODULE 1200V 50A 186W PIM22 | Tray | 22-PIM/Q0BOOST (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH100T120L3Q0S1NG $58.44 | onsemi | 1200V GEN III Q0PACK WITH NI-PLA | Tray | 18-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
| onsemi | POWER INTEGRATED MODULE (PIM), I | Bulk | - | Chassis Mount | - | 150°C (TJ) |

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