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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 NGW50T65M3DFPQ $2.15 | Nexperia USA Inc. | NGW50T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
NGW60T65M3DFPQ $2.27 | Nexperia USA Inc. | NGW60T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
NGW75T65H3DFPQ $2.51 | Nexperia USA Inc. | NGW75T65H3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
NGW75T65H3DFQ $5.86 | Nexperia USA Inc. | IGBT TRENCH FS 650V 80A TO-247 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
NGW75T65M3DFPQ $2.51 | Nexperia USA Inc. | NGW75T65M3DFP/SOT429-2/TO247-3 | Tube | TO-247-3L | Through Hole | - | -40°C ~ 175°C (TJ) |
 NP100T12P2T3Z $123.30 | Nexperia USA Inc. | SOT8053/NP2-35P | Bulk | - | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| onsemi | VE-TRAC DUALAUTOMOTIVE 1200 V, 4 | Bulk | AHPM15-CEA | Chassis Mount | VE-Trac ™ | -40°C ~ 150°C (TJ) | |
| onsemi | VE-TRAC DUAL GEN II - DUAL SIDE | Bulk | AHPM15-CEC | Through Hole | VE-Trac™ | -40°C ~ 175°C (TJ) |
