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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NGTD13T65F2WP $0.65 | onsemi | IGBT TRENCH FIELD STOP 650V DIE | Bulk,Bulk | Die | Surface Mount | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FIELD STOP 1200V DIE | Tray | Die | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT TRENCH FIELD STOP 1200V DIE | Bulk | Die | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT TRENCH FIELD STOP 650V DIE | Tape & Reel (TR) | Die | Surface Mount | - | -55°C ~ 175°C (TJ) | |
| onsemi | IGBT TRENCH FIELD STOP 1200V DIE | Tape & Reel (TR) | Die | Surface Mount | - | -55°C ~ 175°C (TJ) | |
![]() NGTD28T65F2SWK $0.68 | onsemi | IGBT TRENCH FIELD STOP 650V DIE | Tape & Reel (TR) | Die | Surface Mount | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FIELD STOP 650V DIE | Bulk | Die | Surface Mount | - | -55°C ~ 175°C (TJ) | |
![]() NGTG12N60TF1G $1.25 | onsemi | IGBT 600V 24A 54W TO-3PF | Tube | - | - | * | - |

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