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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 NXH240B120H3Q1P1G $77.66 | onsemi | 150KW 110V Q1BOOST PRESS-FIT PI | Tray | 32-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH240B120H3Q1PG $64.99 | onsemi | PIM Q1 3 CHANNEL IGBT+SIC BOOST | Tray | 32-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
NXH240B120H3Q1PG-R $101.89 | onsemi | PIM Q1 3 CHANNEL IGBT+SIC BOOST | Tray | 32-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH240B120H3Q1S1G $66.80 | onsemi | 150KW 110V Q1BOOST SOLDER PIN | Tray | 32-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH240B120H3Q1S1G-R $104.64 | onsemi | 150KW 110V Q1BOOST SOLDER PIN | Tray | 32-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| onsemi | POWER INTEGRATED MODULE (PIM) 3- | Bulk | - | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 NXH25C120L2C2SG $61.46 | onsemi | IGBT MODULE, CIB 1200 V, 25 A IG | Bulk,Tube,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
 NXH25T120L2Q1PG $68.14 | onsemi | PIM Q1 3 CHANNEL T-TYPE NPC 25A | Tray,Tray | 44-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
