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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 NXH350N100H4Q2F2PG $100.76 | onsemi | IC MODULE PIM 350A 1000V | Tray,Tray | 42-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
NXH350N100H4Q2F2S1G $144.19 | onsemi | IC PWR MODULE 1000V 350A PIM42 | Tray | 42-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH350N100H4Q2F2S1G-R $221.09 | onsemi | GEN1.5 1500V MASS MARKET | Tray | 42-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
| onsemi | IC MODULE PIM 350A 1000V | Tray | 42-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 NXH35C120L2C2ESG $67.46 | onsemi | IGBT MODULE, CIB 1200 V, 35 A IG | Tube,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
NXH35C120L2C2S1G $68.61 | onsemi | IGBT MOD 1200V 35A 26DIP | Tube,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
NXH35C120L2C2SG $75.28 | onsemi | IGBT MODULE, CIB 1200 V, 35 A IG | Bulk,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
 NXH400B100H4Q2F2PG $124.19 | onsemi | N06NF Q2BOOST | Tray | 50-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
