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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 NXH40T120L3Q1PG $71.28 | onsemi | IGBT MOD 3TNPC Q1PACK 1200V/40 | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
NXH40T120L3Q1PTG $56.88 | onsemi | PIM Q1 3 CHANNEL T-TYPE NPC 40A | Tray | 44-PIM (71x37.4) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
 NXH40T120L3Q1SG $54.63 | onsemi | IGBT MODULE SUNGROW 20KW Q1PACK | Tray | - | Chassis Mount | - | -40°C ~ 75°C (TJ) |
 NXH450B100H4Q2F2PG $110.63 | onsemi | 1000V,75A FSIII IGBT, MID SPEED | Tray | 56-PIM (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH450B100H4Q2F2PG-R $200.86 | onsemi | 1000V75A FSIII IGBT MID SPEED WI | Tray | 56-PIM (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
NXH450B100H4Q2F2SG $124.38 | onsemi | 1000V,75A FSIII IGBT, MID SPEED | Tray | 56-PIM (93x47) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
 NXH450N65L4Q2F2PG $104.59 | onsemi | 650V 450A 3-LEVEL NPC INVERTER M | Tray | 36-PIM/Q2PACK (93x47) | Chassis Mount | - | 150°C (TJ) |
 NXH450N65L4Q2F2S1G $108.69 | onsemi | 120KW 1100V Q2PACK | Tray | 40-PIM/Q2PACK (107.2x47) | Chassis Mount | - | 175°C (TJ) |
