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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NXH50M65L4Q1PTG $41.79 | onsemi | 6KW H6.5 50A Q1PACK PRESS-FIT PI | Tray | 53-PIM/Q2PACK (93x47) | Chassis Mount | - | 175°C (TJ) |
![]() NXH50M65L4Q1SG $53.75 | onsemi | Q1PACK 50A 650V | Tray | 56-PIM (93x47) | Chassis Mount | - | 175°C (TJ) |
![]() NXH600A100H4F5SNG $182.58 | onsemi | F5 1500V 600A ANPC IGBT SOLDER P | Tray | - | - | - | - |
![]() NXH600B100H4Q2F2PG $179.33 | onsemi | MASS MARKET GEN3 Q2BOOST WITH PR | Tray | 44-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH600B100H4Q2F2S1G $153.23 | onsemi | FLYING CAP 3CHANNEL Q2BOOST WITH | Tray | 56-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH600B100H4Q2F2SG $139.58 | onsemi | MASS MARKET GEN3 Q2BOOST | Tray | 44-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH600N100L4F5PG $156.39 | onsemi | 15709 F5 INVENTER WITH BASEPLATE | Tray | - | - | - | - |
![]() NXH600N105H7F5P1HG $224.21 | onsemi | INVERTER | Tray | 57-PIM (112x62) | Chassis Mount | - | -40°C ~ 150°C (TJ) |

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