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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | PIM POWER MODULE | Tray | 22-PIM/Q0BOOST (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| onsemi | POWER INTEGRATED MODULE, DUAL BO | Bulk | 22-PIM/Q0BOOST (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 NXH80B120MNQ0SNG $57.76 | onsemi | PIM POWER MODULE | Tray | 22-PIM/Q0BOOST (55x32.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
NXH80T120L2Q0P2G $38.19 | onsemi | IC MODULE PIM 1200V 80A | Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
NXH80T120L2Q0P2TG $31.74 | onsemi | IGBT MODULE 1200V 80A TNPC PIM20 | Tray,Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| onsemi | PIM IGBT CLAMP 1200V Q0PACK180AA | Tray | Q0Pack180AA | Press Fit | - | - | |
NXH80T120L2Q0S2G $46.21 | onsemi | PIM 1200V 80A TNPC STAND | Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
NXH80T120L2Q0S2TG $48.04 | onsemi | MODULE PIM 1200V 80A | Bulk,Bulk,Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | 150°C (TJ) |
