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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NXH600N105H7F5S1HG $261.10 | onsemi | IGBT MODULE, I-TYPE NPC 1050 V, | Tray | 57-PIM (112x62) | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() NXH600N105L7F5P1HG $174.36 | onsemi | INVERTER | Tray | - | - | - | - |
| onsemi | IGBT MODULE, I-TYPE NPC 1050 V, | Bulk | 60-PIM (112x62) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
![]() NXH600N105L7F5S1HG $157.02 | onsemi | IGBT MODULE, I-TYPE NPC 1050 V, | Tray | - | Chassis Mount | - | -40°C ~ 175°C (TJ) |
| onsemi | IGBT MODULE, I-TYPE NPC 1050 V, | Bulk | 60-PIM (112x62) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
| onsemi | IGBT MODULE, I-TYPE NPC 1050 V, | Bulk | 58-PIM (112x62) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
| onsemi | POWER INTEGRATED MODULE (PIM), I | Bulk | 41-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
![]() NXH600N65L4Q2F2SG $118.86 | onsemi | 150KW 1100V Q2PACK SOLDER PIN | Tray | 41-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |

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