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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemi6KW H6.5 75A Q1PACK PRESS-FIT PITray53-PIM/Q2PACK (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemiQ1PACK 75A 650VTray56-PIM (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemiMASS MARKET GEN3 Q2PACK POSITIVETray51-PIM/Q2PACK (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemiMASS MARKET GEN3 Q2PACK NEGATIVETray51-PIM/Q2PACK (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemiMASS MARKET GEN3 Q2PACK POSITIVETray51-PIM/Q2PACK (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemiMASS MARKET GEN3 Q2PACK NEGATIVETray51-PIM/Q2PACK (93x47)Chassis Mount--40°C ~ 175°C (TJ)
onsemi1200V 800A QDUAL3Tray11-PIM (152x62.15)Chassis Mount--40°C ~ 175°C (TJ)
onsemiPIM 1200V, 40A DUAL BOOSTBulk,Tray,Tray,Tray--*-
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