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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() NXH75M65L4Q1PTG $57.18 | onsemi | 6KW H6.5 75A Q1PACK PRESS-FIT PI | Tray | 53-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH75M65L4Q1SG $62.20 | onsemi | Q1PACK 75A 650V | Tray | 56-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH800A100L4Q2F2P1G $115.01 | onsemi | MASS MARKET GEN3 Q2PACK POSITIVE | Tray | 51-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH800A100L4Q2F2P2G $108.70 | onsemi | MASS MARKET GEN3 Q2PACK NEGATIVE | Tray | 51-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH800A100L4Q2F2S1G $121.75 | onsemi | MASS MARKET GEN3 Q2PACK POSITIVE | Tray | 51-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH800A100L4Q2F2S2G $121.75 | onsemi | MASS MARKET GEN3 Q2PACK NEGATIVE | Tray | 51-PIM/Q2PACK (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH800H120L7QDSG $158.69 | onsemi | 1200V 800A QDUAL3 | Tray | 11-PIM (152x62.15) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() NXH80B120H2Q0SG $63.09 | onsemi | PIM 1200V, 40A DUAL BOOST | Bulk,Tray,Tray,Tray | - | - | * | - |

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