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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | 136KW 650V Q2PACK | Tray | 40-PIM/Q2PACK (107.2x47) | Chassis Mount | - | 150°C (TJ) | |
| onsemi | SI/SIC HYBRID MODULE, 2 CHANNEL | Bulk | 58-PIM (112x62) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
| onsemi | SI/SIC HYBRID MODULE, 2 CHANNEL | Bulk | 50-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
| onsemi | SI/SIC HYBRID MODULE, 2 CHANNEL | Bulk | 50-PIM (93x47) | Chassis Mount | - | -40°C ~ 175°C (TJ) | |
 NXH50C120L2C2ES1G $80.01 | onsemi | IGBT MOD 1200V 50A 26DIP | Bulk,Tube,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
 NXH50C120L2C2ESG $96.94 | onsemi | IGBT MODULE, CIB 1200 V, 50 A IG | Tube,Tube | 26-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
| onsemi | 650V 50A CONVERTER-INVERTER-PFCS | Tube | 27-DIP | Through Hole | - | -40°C ~ 150°C (TJ) | |
NXH50M65L4C2SG $56.99 | onsemi | 650V 50A CONVERTER-INVERTER-PFCS | Tube | 27-DIP | Through Hole | - | -40°C ~ 150°C (TJ) |
