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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT MODULE 1200V 65A 146W PIM20 | Tray | 20-PIM/Q0PACK (55x32.5) | Through Hole | - | -40°C ~ 150°C (TJ) | |
 NXH80T120L3Q0P3G $35.35 | onsemi | PIM GENERATION3 Q0PACK 1200V, 80 | Tray,Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
 NXH80T120L3Q0S3G $67.15 | onsemi | PIM GENERATION3 Q0PACK 1200V, 80 | Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | -40°C ~ 175°C (TJ) |
NXH80T120L3Q0S3TG $40.37 | onsemi | PIM GENERATION3 Q0PACK 1200V, 80 | Tray | 20-PIM/Q0PACK (55x32.5) | Chassis Mount | - | 175°C (TJ) |
P2000D45X168HPSA1 $5,957.99 | Infineon Technologies | PRESS PACK IGBT BG-P16826K-1 | Tray | - | - | - | - |
P2000DE45X168HPSA1 $6,381.61 | Infineon Technologies | PRESS PACK IGBT | Tray | - | - | - | - |
P2000DL45X168APT8HPSA1 $7,476.34 | Infineon Technologies | PRESS PACK IGBT | Tray | - | - | - | - |
 P2000DL45X168APTHPSA1 $6,381.61 | Infineon Technologies | PRESS PACK IGBT BG-P16826K-1 | Tray | BG-P16826K-1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
