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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
STMicroelectronicsIGBT 600V 14A TO-220FPTubeTO-220FPThrough HolePowerMESH™-55°C ~ 150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 216A 9ACEPAKBulk9-ACEPACK SMITSurface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsTRENCH GATE FIELD-STOP, 1200 V,Tape & Reel (TR),Cut Tape (CT)9-ACEPACK SMITSurface Mount--55°C ~ 175°C (TJ)
STMicroelectronicsLinear IC'sBulk9-ACEPACK SMITSurface MountHB-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 145A TO-247TubeTO-247-4Through HoleHB2-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 650V 20A TO-247-3TubeTO-247-3Through HoleM-55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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