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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| IXYS | IGBT MOD 600V 69A 208W ECO-PAC2 | Box | ECO-PAC2 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| IXYS | MOSFET | Bulk | - | - | - | - | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 121A 462W MTP | Tray | MTP | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 107A 403W MTP | Tube | MTP | Through Hole | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 138A 12MTP PRESS | Tube | 12-MTP Pressfit | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 138A 12MTP PRESS | Tube | 12-MTP Pressfit | Chassis Mount | - | 150°C (TJ) | |
 VS-20MT120PFP $60.56 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - MTP SWITCH | Bulk | 16-MTP | Chassis Mount | HEXFRED® | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 20A 240W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) |
