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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 27A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 24A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 20A 63W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 88A 338W EMIPAK2 | Bulk | EMIPAK2 | Chassis Mount | - | 150°C (TJ) | |
 VS-ENK025C65S $53.18 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
 VS-ENM040M60P $47.81 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 61A EMIPAK-1B | Bulk | EMIPAK-1B | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD | Bulk | - | - | - | - |
