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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() VS-ENV020F65U $29.86 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENV020M120M $32.19 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENW30S120T $90.93 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENY050C60 $41.24 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ENZ025C60N $47.81 | Vishay General Semiconductor - Diodes Division | POWER MODULE | Box | - | - | * | - |
![]() VS-ETF075Y60U $71.77 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 109A EMIPAK-2B | Bulk | EMIPAK-2B | Chassis Mount | - | 175°C (TJ) |
![]() VS-ETF150Y65N $54.09 | Vishay General Semiconductor - Diodes Division | IGBT MOD 650V 201A 600W | Box | Module | - | FRED Pt® | 175°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 650V 142A EMIPAK-2B | Tray | EMIPAK-2B | Chassis Mount | - | 175°C (TJ) |

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