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— IC芯片 | 连接器 | 传感器 | 被动器件 —

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 40A 240W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 69A 195W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | MODULE IGBT MTP SWITCH | Tray | 12-MTP | Chassis Mount | HEXFRED® | 150°C (TJ) | |
![]() VS-40MT120PHAPBF $51.92 | Vishay General Semiconductor - Diodes Division | MTP - HALF BRIDGE IGBT | Tube | 12-MTP | Through Hole | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 80A 463W MTP | Tube | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 80A 463W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
![]() VS-50MT060PHTAPBF $46.16 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - MTP SWITCH | Bulk | 12-MTP | Through Hole | HEXFRED® | -40°C ~ 150°C (TJ) |
![]() VS-50MT060TFT $38.25 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - MTP SWITCH | Bulk | 20-MTP | Chassis Mount | FRED Pt® | -40°C ~ 175°C (TJ) |