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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Vishay General Semiconductor - Diodes DivisionIGBT MODULE 1200V 40A 240W MTPTrayMTPChassis Mount--40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionIGBT MODULE 600V 69A 195W MTPTrayMTPChassis Mount--40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionMODULE IGBT MTP SWITCHTray12-MTPChassis MountHEXFRED®150°C (TJ)
Vishay General Semiconductor - Diodes DivisionMTP - HALF BRIDGE IGBTTube12-MTPThrough Hole--40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionIGBT MODULE 1200V 80A 463W MTPTubeMTPChassis Mount--40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionIGBT MODULE 1200V 80A 463W MTPTrayMTPChassis Mount--40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionMODULES IGBT - MTP SWITCHBulk12-MTPThrough HoleHEXFRED®-40°C ~ 150°C (TJ)
Vishay General Semiconductor - Diodes DivisionMODULES IGBT - MTP SWITCHBulk20-MTPChassis MountFRED Pt®-40°C ~ 175°C (TJ)
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