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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 114A 658W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 100A 347W MTP | Tray | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 96A 378W MTP | Tray | MTP | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 8.8A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 3PHASE IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 7.2A 23W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 3PHASE IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 600V 11A 36W IMS-2 | Bulk | IMS-2 | Through Hole | - | -40°C ~ 150°C (TJ) |
