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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 200A 500W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -55°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 260A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 400A 961W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 530A INT-A-PAK | Bulk | Dual INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 750A INT-A-PAK | Bulk | Dual INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 0 76W MTP | Bulk | MTP | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 VS-GB100DA60UP $18.53 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 125A 447W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 200A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) |
