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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 VS-GB50NA120UX $18.27 | Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 84A 431W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 100A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 66A ECONO2 4PACK | Bulk | ECONO2 4PACK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 84A 431W SOT227 | Tube | SOT-227 | Chassis Mount | HEXFRED® | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 84A 431W SOT227 | Tube | SOT-227 | Chassis Mount | HEXFRED® | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 910A INT-A-PAK | Bulk | Double INT-A-PAK | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
VS-GB70LA60UF $18.32 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 111A 447W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
VS-GB75DA120UP $17.32 | Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 658W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
