IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date

Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
VS-GB90SA120U	Vishay General Semiconductor - Diodes Division	IGBT MOD 1200V 149A 862W SOT227	Tube	SOT-227	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GP100TS60SFPBF	Vishay General Semiconductor - Diodes Division	IGBT MOD 600V 337A INT-A-PAK	Tube	INT-A-PAK	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GP250SA60S	Vishay General Semiconductor - Diodes Division	IGBT MOD 600V 380A 893W SOT227	Tube	SOT-227	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GP300TD60S	Vishay General Semiconductor - Diodes Division	IGBT MOD 600V 580A INT-A-PAK	Tube	Dual INT-A-PAK	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GP400TD60S	Vishay General Semiconductor - Diodes Division	IGBT MOD 600V 758A INT-A-PAK	Tube	Dual INT-A-PAK	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GT100DA120U $79.41	Vishay General Semiconductor - Diodes Division	IGBT MOD 1200V 258A 893W SOT227	Bulk	SOT-227	Chassis Mount	-	-40°C ~ 150°C (TJ)
VS-GT100DA120UF $35.09	Vishay General Semiconductor - Diodes Division	IGBT MOD 1200V 187A 890W SOT227	Bulk	SOT-227	Chassis Mount	HEXFRED®	-40°C ~ 150°C (TJ)
VS-GT100LA65UF $21.62	Vishay General Semiconductor - Diodes Division	MODULES IGBT - SOT-227 IGBT	Bulk	SOT-227	Chassis Mount	FRED Pt®	-40°C ~ 175°C (TJ)