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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 VS-GT100NA120UX $39.95 | Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 134A 463W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 180A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | 175°C (TJ) | |
 VS-GT100TP60N $59.85 | Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 160A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | 175°C (TJ) |
 VS-GT100TS065N $61.21 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - IAP IGBT | Box | INT-A-PAK IGBT | Chassis Mount | - | -40°C ~ 175°C (TJ) |
VS-GT100TS065S $56.85 | Vishay General Semiconductor - Diodes Division | MODULES IGBT - IAP IGBT | Box | INT-A-PAK IGBT | Chassis Mount | FRED Pt® | -40°C ~ 175°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 134A 463W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 134A 463W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 650V 167A 577W SOT227 | Bulk | SOT-227 | Chassis Mount | FRED Pt® | -40°C ~ 175°C (TJ) |
