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IGBTs
IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
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| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 109A 447W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 109A 447W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
 VS-GB75SA120UP $39.16 | Vishay General Semiconductor - Diodes Division | IGBT MODULE 1200V 658W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 150A INT-A-PAK | Bulk | INT-A-PAK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 100A ECONO2 4PACK | Bulk | ECONO2 4PACK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 100A ECONO2 4PACK | Bulk | ECONO2 4PACK | Chassis Mount | - | 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 1200V 149A 862W SOT227 | Bulk | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) | |
| Vishay General Semiconductor - Diodes Division | IGBT MOD 600V 147A 625W SOT227 | Tube | SOT-227 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
