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1N3070UR is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STD 200V 100MA DO213AA. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N3070UR is a hermetically sealed small signal switching diode designed for high-reliability applications. It features a DO-213AA outline with copper clad steel leads and tin/lead finish. The device supports an operating temperature range from -65°C to +175°C and handles a DC reverse voltage of 175V. Key electrical parameters include a maximum forward voltage of 1.0V at 100mA, a breakdown voltage of 175V, and a maximum reverse current of 200µA at 200V. Total power dissipation is rated at 500mW, with a thermal resistance of 50°C/W.
Verify the specific ordering suffix (e.g., JAN, JANTX) required for your application, as these indicate different quality levels under MIL-PRF-19500/169. Confirm lead material and finish specifications match system requirements. Ensure thermal management accounts for the 500mW dissipation limit and derating factor above 25°C ambient temperature.
Select this component when hermetic sealing and wide temperature operation are critical. The DO-213AA package suits through-hole mounting. Consider the 175V reverse voltage rating for appropriate circuit protection. Verify that the 100mA operating current meets load requirements without exceeding thermal limits.
This part belongs to the 1N3070 series of switching diodes manufactured by Microchip Technology. It is available in various military-grade variants including JAN, JANTX, and JANTXV. The LL3070 designation represents an alternative form factor within the same functional family.
Equivalent parts include JAN1N3070UR-1, JANTX1N3070UR-1, and JANTXV1N3070UR-1. These share identical electrical characteristics but differ in manufacturing quality levels per MIL-PRF-19500/169.
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