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1N3659 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 50V 35A DO21. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N3659 is a silicon power rectifier diode designed for high-current applications. It features a press-fit DO-218 package, supporting a continuous forward current of 35A and a repetitive peak reverse voltage of 50V. The device exhibits a maximum forward voltage drop of 1.1V at rated current and a low leakage current of 10µA. This component is engineered for robust performance in general-purpose rectification tasks requiring reliable thermal and electrical stability.
Verify the manufacturer origin carefully, as historical production involved multiple entities including Motorola and Microsemi. Confirm the specific package variant matches your board design requirements. Ensure the datasheet version aligns with your quality standards before finalizing procurement decisions.
Select this component when a 35A continuous current rating and 50V blocking voltage are required. The press-fit DO-218 package necessitates compatible PCB mounting infrastructure. Evaluate thermal management needs based on the 1.1V forward voltage characteristic under load conditions.
This part belongs to the standard 1N series rectifier family, historically significant in industrial electronics. Production has transitioned through various manufacturers, including Motorola Semiconductor and Microsemi Corporation, before being acquired by Microchip Technology. The 1N3659 represents a legacy high-power solution still utilized in maintenance and retrofit scenarios.
Cross-reference with RA3505 for similar high-current specifications. Verify pin compatibility and thermal characteristics against alternative suppliers such as Vishay or STMicroelectronics equivalents before substitution.
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