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1N4448WS
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Product Detailed Parameters
- Description：DIODE STD 100V 150MA SOD323F
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io)：150mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：4 ns
- Current - Reverse Leakage @ Vr：5 µA @ 75 V
- Capacitance @ Vr, F：4pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：SC-90, SOD-323F
- Supplier Device Package：SOD-323F
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The Taiwan Semiconductor Corporation 1N4448WS is a small signal switching diode housed in the SOD-323F surface-mount package. It features a peak reverse voltage of 100 V and an average forward current rating of 150 mA. The device exhibits a fast recovery time of 4 ns with a maximum reverse leakage current of 5 µA at 75 V. Operating junction temperatures range from -65°C to 150°C, and it maintains a low capacitance of 4 pF.
Feature Summary
- High-speed switching capability with rapid recovery characteristics
- Compact surface-mount design for automated assembly
- Wide thermal operating range for demanding environments
Applications
- General purpose signal switching circuits
- High-frequency rectification applications
- Clamping and protection in digital logic interfaces
Procurement Notes
Verify the specific suffix against manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure the selected variant matches the required RoHS compliance status and moisture sensitivity level for your assembly process. Cross-reference the official datasheet for precise handling instructions and storage conditions prior to procurement.
Selection Notes
Select this component when a compact SOD-323F footprint is required alongside high-voltage blocking capabilities. The 100 V rating provides headroom above standard 75 V alternatives. Evaluate the 4 ns recovery time against circuit speed requirements to ensure compatibility with high-frequency signal processing needs.
Part Context
This part belongs to the 1N4448 family of silicon epitaxial planar diodes. It serves as a surface-mount alternative to through-hole variants like the DO-35 packaged 1N4448TAP. The series is designed for general-purpose switching tasks requiring reliable performance in space-constrained electronic designs.
Replacement Considerations
The Vishay 1N4448W-E3-08 offers comparable electrical specifications in a similar SOD-123 form factor. Verify pinout compatibility and slight variations in forward voltage drop before substituting.
