2N3390

Description：TRANS NPN 25V 0.5A TO-92-3
Series：-

SKU:2aa2507676b2 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2N3390 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3390

Description：TRANS NPN 25V 0.5A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：25 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：400 @ 2mA, 4.5V
Power - Max：625 mW
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N3390

2N3390

Single Bipolar Transistors Overview

The onsemi 2N3390 is an NPN general-purpose amplifier and switch designed for collector currents up to 300 mA. It features a maximum collector-emitter voltage (VCEO) of 25 V, a continuous collector current (IC) rating of 500 mA, and a total device dissipation (PD) of 625 mW at 25°C ambient temperature. The component utilizes a TO-92 package with a junction-to-ambient thermal resistance (RθJA) of 200 °C/W. Electrical characteristics include a minimum DC current gain (hFE) of 400 at IC = 2.0 mA, a small-signal output capacitance (Cob) of 2.0 pF, and a noise figure of 5.0 dB for the 2N3391A variant.

Single Bipolar Transistors Feature Summary

Designed for general-purpose amplification and switching applications requiring moderate collector currents.
Provides high DC current gain suitable for low-level signal processing tasks.
Utilizes a standard through-hole TO-92 package for easy integration into legacy and modern circuit boards.

Single Bipolar Transistors Applications

General purpose amplifiers
Electronic switches
Low-level signal processing circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging style, lead configuration, and reel specifications. Ensure the procurement documentation matches the required tape and reel or ammo pack format. Confirm that the component status is listed as active or full production if long-term availability is required for the design.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with a 25 V collector-emitter breakdown voltage is required. Consider the 500 mA continuous current capability and 625 mW power dissipation limits for thermal management. Evaluate the hFE range based on the specific gain requirements of the amplifier stage. Compare thermal resistance values against the available PCB copper area for adequate heat sinking.

Single Bipolar Transistors Part Context

This device belongs to a family of NPN silicon planar transistors manufactured using Process 10 technology. It shares electrical similarities with the 2N3391, 2N3391A, 2N3392, and 2N3393 models, which differ primarily in their DC current gain ranges. The series is intended for discrete power and signal applications where standard amplification and switching functions are needed.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2N3391, 2N3391A, 2N3392, and 2N3393. These parts share identical voltage and current ratings but offer different minimum and maximum DC current gain specifications. Verify that the replacement part's hFE range aligns with the circuit's biasing requirements before substitution.