Single Bipolar Transistors 2N3414 TIN/LEAD product image

2N3414 TIN/LEAD

$0.48
  • Description:25V 500MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:b4f630446444 Category: Brand:

  
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2N3414 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 25V 500MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3414 TIN/LEAD

  • Description:25V 500MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):25 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 3mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 2mA, 4.5V
  • Power - Max:625 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3414 TIN/LEAD

2N3414 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N3414 TIN/LEAD is a silicon NPN transistor manufactured via the epitaxial planar process. It features a continuous collector current of 500 mA and a power dissipation rating of 625 mW. The device supports a collector-emitter voltage (VCEO) of 25 V and a collector-base voltage (VCBO) of 25 V, with an emitter-base voltage (VEBO) of 5.0 V. DC current gain (hFE) ranges from a minimum of 75 to a maximum of 240 at specified test conditions. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92 package.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar silicon NPN construction for reliable switching performance
  • High DC current gain capability suitable for amplifier applications
  • Robust thermal handling with defined power dissipation limits

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Low-power switching applications
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific lead finish designation, as 'TIN/LEAD' indicates a particular plating composition distinct from other variants. Confirm the package type matches the required PCB footprint, typically TO-92 for this series. Ensure the supplier provides official datasheets to validate electrical parameters against design requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor with moderate current handling is required. The 25 V rating suits low-voltage logic or analog circuits. Consider the hFE range for biasing stability. Compare against MPS3414 if pinout compatibility is critical, noting potential differences in lead configuration between the 2N and MPS designations.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor 2N3414 through 2N3417 series. These devices share similar structural characteristics but differ in breakdown voltage ratings. The 2N3414 specifically targets lower voltage applications compared to higher-rated siblings like the 2N3417. It is a standard discrete semiconductor component used in fundamental electronic circuit designs.

Single Bipolar Transistors Replacement Considerations

The MPS3414 is a functional equivalent within the same series. Verify pinout compatibility, as MPS variants may reverse base and collector leads compared to the 2N3414 specification. Ensure replacement parts meet the same voltage and current ratings for direct substitution.

2N3414 TIN/LEAD2N3414 TIN/LEAD
$0.48
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