2N3419

Single Bipolar Transistors Overview

The Microchip Technology 2N3419 is an NPN silicon power bipolar junction transistor (BJT) designed for through-hole mounting in a TO-5-3 metal can package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 3 A. The device dissipates up to 1 W of power and operates within a temperature range of -65 °C to +200 °C. Key electrical characteristics include a DC current gain ranging from 20 to 60 at 1 A, a collector-emitter saturation voltage of 500 mV, and a collector-base breakdown voltage of 125 V.

Single Bipolar Transistors Feature Summary

• High thermal stability with a maximum operating junction temperature of +200 °C
• Robust power handling capability with 3 A continuous collector current
• Metal can construction providing reliable performance in harsh environments

Single Bipolar Transistors Applications

• Power switching circuits requiring high current capacity
• Linear regulation applications utilizing the wide operating temperature range
• Industrial control systems demanding rugged semiconductor components

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturing lot and date code upon receipt to ensure compliance with project requirements. Confirm that the TO-5-3 package dimensions match the designated footprint on the printed circuit board. Check for any product change notifications regarding material composition or testing standards before final integration into the design.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with high current capability and extended temperature tolerance is required. Ensure the circuit design accounts for the 1 W power dissipation limit and appropriate heat sinking if necessary. Compare the 80 V collector-emitter voltage against the maximum expected load voltage to prevent breakdown during operation.

Single Bipolar Transistors Part Context

The 2N3419 belongs to the family of general-purpose power transistors manufactured by Microchip Technology. It serves as a discrete semiconductor solution for amplification and switching tasks. The TO-5-3 package offers superior thermal conductivity compared to plastic alternatives, making it suitable for applications where reliability under thermal stress is critical.

Single Bipolar Transistors Replacement Considerations

Consult official datasheets to verify pinout compatibility and electrical parameter overlaps before substituting with other NPN power transistors. Ensure alternative devices meet the same 3 A current and 80 V voltage ratings.