Single Bipolar Transistors 2N3501L product image

2N3501L

$18.31
  • Description:TRANS NPN 150V 0.3A TO-5
  • Series:-

SKU:ba09c8aa42cd Category: Brand:

  
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2N3501L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 150V 0.3A TO-5. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N3501L

  • Description:TRANS NPN 150V 0.3A TO-5
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2N3501L

2N3501L

Single Bipolar Transistors Overview

The JAN2N3501L is a military-grade NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 150 V and a continuous collector current of 300 mA, with a power dissipation rating of 1 W. The device utilizes a TO-5 metal can package for through-hole mounting. It operates within a junction temperature range of -65°C to +200°C and complies with MIL-PRF-19500/366 specifications. DC current gain is specified at a minimum of 100 under standard test conditions.

Single Bipolar Transistors Feature Summary

  • Military-grade qualification compliant with MIL-PRF-19500/366 standards
  • High thermal stability supporting extended junction temperatures up to 200°C
  • Robust construction in a hermetically sealed TO-5 metal can package

Single Bipolar Transistors Applications

  • High-reliability aerospace electronic systems
  • Military communication equipment signal processing
  • Harsh environment industrial control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability documentation upon receipt to ensure compliance with MIL-PRF-19500/366 requirements. Confirm that the component matches the JAN prefix designation for military grade rather than commercial variants. Inspect the TO-5 package integrity for any physical damage that could compromise hermetic sealing. Ensure storage conditions align with moisture sensitivity guidelines despite the non-RoHS status typical of this product line.

Single Bipolar Transistors Selection Notes

Select this component when design requirements demand high voltage handling capabilities combined with strict reliability standards for defense or space applications. The TO-5 package necessitates through-hole layout considerations compared to surface-mount alternatives. Evaluate the thermal management strategy carefully due to the 1 W power dissipation limit in the metal can configuration. Consider the extended operating temperature range as a critical advantage over commercial-grade transistors in extreme environments.

Single Bipolar Transistors Part Context

This part belongs to the 2N3501 series of NPN transistors produced by Microchip Technology. It serves as the military-qualified version of the standard 2N3501 device. The JAN prefix indicates adherence to strict military procurement specifications. The series is designed for general-purpose switching and amplification tasks where long-term stability and radiation hardness are prioritized over cost efficiency.

Single Bipolar Transistors Replacement Considerations

The 2N3501L is a direct substitute for the JAN2N3501L. Both parts share identical electrical characteristics and mechanical form factors. Verify that the replacement source provides equivalent military certification documentation.

2N3501L2N3501L
$18.31
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