2N5059 TIN/LEAD

$6.38

Description：250V 150MA 1W TH TRANSISTOR-SMAL
Series：-

SKU:cb316ffeb777 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

2N5059 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 250V 150MA 1W TH TRANSISTOR-SMAL. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2N5059 TIN/LEAD

Description：250V 150MA 1W TH TRANSISTOR-SMAL
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：150 mA
Voltage - Collector Emitter Breakdown (Max)：250 V
Vce Saturation (Max) @ Ib, Ic：1V @ 3mA, 30mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 30mA, 25V
Power - Max：5 W
Frequency - Transition：160MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2N5059 TIN/LEAD

2N5059 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor Corp 2N5059 TIN/LEAD is a silicon NPN epitaxial planar transistor housed in a TO-39 cylindrical metal package. It features a collector-base voltage of 300 V and a collector-emitter voltage of 300 V, with an emitter-base voltage rating of 7.0 V. The device supports a continuous collector current of 150 mA and a power dissipation of 1.0 W at 25°C case temperature. It operates within a junction temperature range of -65°C to 175°C.

Single Bipolar Transistors Feature Summary

Epitaxial planar construction for high voltage stability
Metal can packaging for robust thermal performance
Designed for general purpose amplifier applications

Single Bipolar Transistors Applications

High voltage general purpose amplification
Discrete semiconductor circuit design
Industrial electronic systems requiring metal package reliability

Single Bipolar Transistors Procurement Notes

Verify the specific leaded (TIN/LEAD) variant against RoHS requirements, as this configuration may not comply with modern environmental directives. Confirm that the TO-39 through-hole mounting style matches the target PCB layout. Ensure the supplier provides official datasheets confirming the 300V ratings and 1W dissipation limits before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when high voltage handling capability up to 300V is required alongside the mechanical durability of a metal TO-39 package. It serves as a direct functional equivalent to standard military-grade 2N5059 specifications. Consider the thermal resistance characteristics inherent to the metal case design for heat dissipation planning in dense assemblies.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor discrete bipolar transistor portfolio, specifically the NPN small-signal category. It shares the same electrical profile as the 2N5058 PNP counterpart but utilizes NPN polarity. The product line emphasizes industrial-grade reliability and custom device development capabilities for specialized semiconductor needs.