Jfets 2N5115E3 product image

2N5115E3

$30.22
  • Description:JFET P-CH 30V TO18
  • Series:-

SKU:06026a56bbd8 Category: Brand:

  
  • Quantity
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2N5115E3 is listed in the Jfets range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is JFET P-CH 30V TO18. Review the specifications below when checking this part for your BOM.

Jfets specifications for 2N5115E3

  • Description:JFET P-CH 30V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):15 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:3 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 15V
  • Resistance - RDS(On):100 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:-
  • Qualification:-

Jfets datasheet and documents for 2N5115E3

2N5115E3

Jfets Overview

The 2N5115E3 is a P-channel silicon small-signal Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for low-noise and high-reliability applications, featuring a hermetically sealed metal can construction. Key electrical parameters include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device operates with a zero-bias drain-source current of 7 mA and has a maximum power dissipation of 500 mW. It supports an operating temperature range from -65°C to +200°C.

Jfets Feature Summary

  • Hermetically sealed TO-18 metal can package for environmental protection
  • P-channel silicon JFET technology for low-noise signal processing
  • High-temperature capability up to +200°C for extreme environments

Jfets Applications

  • Low-noise amplifier circuits in aerospace systems
  • High-temperature sensor interface electronics
  • Precision analog signal conditioning modules

Jfets Procurement Notes

Verify the specific suffix E3 indicates lead-free compliance against the manufacturer's official datasheet. Confirm that the TO-18 package dimensions match the design requirements. Ensure the ordering quantity meets the manufacturer's minimum order specifications. Check for any military screening options if higher reliability is required for the application.

Jfets Selection Notes

Select this component when a hermetically sealed P-channel JFET is required for high-temperature operation. Compare the 30 V breakdown voltage and 7 mA IDSS against circuit biasing needs. Consider the TO-18 package constraints for PCB layout or chassis mounting. Verify thermal management capabilities given the 500 mW power dissipation limit.

Jfets Part Context

The 2N5115E3 belongs to the standard 2N5115 series of P-channel JFETs. It serves as the lead-free compliant variant of the traditional 2N5115 device. This series is commonly used in military and aerospace electronics where reliability and radiation hardness are critical. It complements other N-channel variants like the 2N5457 in complementary designs.

Jfets Replacement Considerations

Direct pin-compatible replacements include the standard 2N5115 (non-E3) for non-lead-free applications. Other compatible JFETs may require circuit re-biasing due to parameter variations. Verify that substitute devices meet the same high-temperature rating and hermetic sealing requirements.

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