Single Bipolar Transistors 2SB1560 product image

2SB1560

$3.86
  • Description:TRANS PNP DARL 150V 10A TO-3P
  • Series:-

SKU:414218c5fa3b Category: Brand:

  
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2SB1560 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS PNP DARL 150V 10A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1560

  • Description:TRANS PNP DARL 150V 10A TO-3P
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 7mA, 7A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 7A, 4V
  • Power - Max:100 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1560

2SB1560

Single Bipolar Transistors Overview

The Sanken Electric 2SB1560 is a Silicon PNP Epitaxial Planar Transistor designed for audio, series regulator, and general-purpose applications. It serves as the complement to the 2SD2390 type. Key absolute maximum ratings include a collector-base voltage of -160 V, collector-emitter voltage of -150 V, emitter-base voltage of -5 V, and continuous collector current of -10 A. The device supports a maximum power dissipation of 100 W at a case temperature of 25°C and operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Darlington configuration providing high DC current gain
  • Epitaxial planar silicon construction for reliability
  • Isolated mounting tab for heatsink integration

Single Bipolar Transistors Applications

  • Audio amplifiers
  • Series regulators
  • General purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your design, as these denote distinct gain ranges. Confirm the MT-100 (TO-3P) package dimensions match your mechanical constraints. Ensure thermal management strategies account for the 100 W dissipation rating at 25°C case temperature. Cross-reference the complement part number 2SD2390 if matching NPN/PNP pairs are needed for push-pull stages.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and moderate voltage blocking are required in a single-ended or complementary pair topology. The Darlington structure simplifies drive requirements but increases saturation voltage compared to single-transistor designs. Evaluate the safe operating area curves for pulse applications to ensure thermal stability under transient loads.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's lineup of power bipolar transistors intended for medium-to-high power applications. It is specifically engineered to pair with the 2SD2390 NPN counterpart, facilitating balanced performance in output stages. The MT-100 package provides robust mechanical mounting and efficient heat transfer capabilities essential for power electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD2390 as its complement. No other direct substitute part numbers are documented in the provided source material.

2SB15602SB1560
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