Single Bipolar Transistors 2SB1623AP product image

2SB1623AP

  • Description:TRANS PNP DARL 80V 4A TO-220D-A1
  • Series:-

SKU:ec0a426cc26d Category: Brand:

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2SB1623AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS PNP DARL 80V 4A TO-220D-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1623AP

  • Description:TRANS PNP DARL 80V 4A TO-220D-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Bulk
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):4:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:4000 @ 3A, 3V
  • Power - Max:2 W
  • Frequency - Transition:20MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220D-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1623AP

2SB1623AP

Single Bipolar Transistors Overview

The Panasonic 2SB1623AP is a silicon PNP epitaxial planar power transistor designed for power amplification. It features a TO-220D-A1 package with a dielectric breakdown voltage exceeding 5 kV. Key electrical parameters include a collector-emitter voltage (VCEO) of -80 V, a continuous collector current (IC) of -4 A, and a peak collector current (ICP) of -8 A. The device offers a high forward current transfer ratio (hFE) ranging from 1,000 to 10,000 depending on the rank, with a transition frequency (fT) of 20 MHz. Collector power dissipation is rated at 40 W at 25°C.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio (hFE) with satisfactory linearity
  • Package dielectric breakdown voltage exceeds 5 kV
  • Designed specifically for power amplification applications

Single Bipolar Transistors Applications

  • General electronic equipment
  • Office equipment
  • Communications equipment
  • Measuring instruments
  • Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (R, Q, or P) required for your circuit design, as gain ranges vary significantly between classifications. Confirm that the application remains within standard general-purpose electronics, as the datasheet explicitly excludes aerospace, automotive, and life-support systems. Ensure thermal management aligns with the 40 W rating at 25°C case temperature.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and linear amplification are required in a robust TO-220D-A1 package. The 5 kV package isolation makes it suitable for environments requiring significant internal dielectric strength. Consider the -80 V collector-emitter voltage limit and -4 A continuous current capability when sizing for load requirements.

Single Bipolar Transistors Part Context

The 2SB1623A belongs to Panasonic's lineup of silicon PNP epitaxial planar transistors. Manufactured using planar technology, it provides reliable performance for power amplification tasks. The 'AP' suffix typically denotes the specific TO-220D-A1 plastic package variant equipped with an integrated insulating washer for mounting.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching the -80 V VCEO, -4 A IC, and TO-220D-A1 package dimensions.

2SB1623AP2SB1623AP

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