Single Bipolar Transistors 2SB647CTZ-E product image

2SB647CTZ-E

$0.54
  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-

SKU:bf40179569cb Category: Brand:

  
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2SB647CTZ-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS PNP 80V 1A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB647CTZ-E

  • Description:TRANS PNP 80V 1A TO-92MOD
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB647CTZ-E

2SB647CTZ-E

Single Bipolar Transistors Overview

The 2SB647CTZ-E is a PNP silicon small-signal bipolar junction transistor manufactured by Renesas Electronics Corporation. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 80 V. The device operates with a transition frequency of 140 MHz and supports a maximum power dissipation of 900 mW. It utilizes a TO-92MOD through-hole package and maintains a DC current gain of at least 100 at 150 mA. The component is rated for junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration for signal amplification
  • Through-hole mounting via TO-92MOD package
  • High-frequency operation capability

Single Bipolar Transistors Applications

  • Amplifier circuits
  • Switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix CTZ-E against official Renesas documentation to confirm pinout and packaging variations. Confirm RoHS status as the provided data indicates non-compliance. Ensure the supplier provides valid traceability for this discontinued or legacy part number from Hitachi/Renesas sources.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80V rating and 1A continuous current capacity is required in a through-hole form factor. Consider the 140MHz transition frequency for high-speed switching needs. Verify thermal management requirements for 900mW dissipation in the final enclosure design.

Single Bipolar Transistors Part Context

This component belongs to the Renesas (formerly Hitachi) small-signal bipolar transistor lineup. It serves as a discrete semiconductor solution for general-purpose electronic designs requiring reliable PNP switching or amplification characteristics within standard through-hole constraints.

Single Bipolar Transistors Replacement Considerations

The 2SB647ATZ is a related variant with a 100V rating. Verify electrical compatibility before substitution.

2SB647CTZ-E2SB647CTZ-E
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