2SB647L-D-AP

Single Bipolar Transistors Overview

The MCC 2SB647L-D-AP is a PNP plastic-encapsulated transistor housed in a TO-92L package. It features a collector-emitter voltage of -80 V, a collector-base voltage of -120 V, and an emitter-base voltage of -5.0 V. The device supports a maximum collector current of -1 A with a power dissipation of 750 mW. Operating junction temperature ranges from -55 to +150 °C. DC current gain (hFE) varies by classification: B (60–120), C (100–200), and D (160–320). Transition frequency is typically 140 MHz at -150 mA.

Single Bipolar Transistors Feature Summary

• Designed for low-frequency power amplifier applications
• Formed as part of a complementary pair with the 2SD667 NPN transistor
• Epoxy encapsulation meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• Low-frequency power amplification circuits
• Complementary switching configurations paired with 2SD667

Single Bipolar Transistors Procurement Notes

Verify authenticity through authorized distributors or direct MCC channels to avoid counterfeit components. Confirm specific hFE binning (B, C, or D) requirements during ordering, as performance varies significantly across classifications. Ensure packaging matches project needs, noting that the -AP suffix indicates ammo box packing.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high collector-base breakdown voltage (-120 V) is required alongside moderate current handling capabilities. Consider the thermal resistance of 167 °C/W for heat management. Match the hFE class to circuit sensitivity, as gain ranges widely from 60 to 320 depending on the sub-type selected.

Single Bipolar Transistors Part Context

This device belongs to Micro Commercial Components' line of plastic-encapsulated bipolar junction transistors. It serves as the PNP counterpart to the 2SD667 NPN transistor, facilitating push-pull or complementary amplifier designs. The TO-92L package provides a standard through-hole mounting solution suitable for general-purpose electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes include other PNP transistors rated for -80 V VCEO and -1 A IC in TO-92 packages. Verify pinout compatibility and ensure equivalent hFE and fT specifications are met before substitution.

Single Bipolar Transistors FAQ

What are the available hFE classifications for the 2SB647L?

The datasheet specifies three gain classifications: Class B (60–120), Class C (100–200), and Class D (160–320).

Is this transistor compatible with the 2SD667?

Yes, the datasheet explicitly lists the 2SB647L as the complementary pair to the 2SD667 NPN transistor.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is rated at -120 V.