2SB857C-E

$1.57

Description：TRANS PNP 50V 4A TO-220AB
Series：-

SKU:5e4f16d7d5ef Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

2SB857C-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS PNP 50V 4A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB857C-E

Description：TRANS PNP 50V 4A TO-220AB
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：1V @ 200mA, 2A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 1A, 4V
Power - Max：40 W
Frequency - Transition：15MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SB857C-E

2SB857C-E

Single Bipolar Transistors Overview

The 2SB857C-E is a silicon PNP power bipolar transistor manufactured by Renesas Electronics Corporation. It features a maximum collector current of 4 A and a collector-emitter breakdown voltage of 50 V. The device utilizes a TO-220AB flange mount package with plastic/epoxy encapsulation, where the collector connects to the metal flange for heat dissipation. It operates at junction temperatures up to 150 °C and has a minimum DC current gain (hFE) of 100.

Single Bipolar Transistors Feature Summary

Triple diffused silicon PNP construction for robust power handling
Collector terminal integrated with mounting flange for efficient thermal management
Designed as part of a complementary pair with NPN transistors for amplifier circuits

Single Bipolar Transistors Applications

Low frequency power amplifiers
Complementary push-pull output stages
General purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm if it denotes a specific tape-and-reel packaging variant or environmental compliance status distinct from the standard 2SB857C. Ensure the component matches the RoHS non-compliant status indicated in general datasheets unless updated specifications are provided.

Single Bipolar Transistors Selection Notes

Select this component when a high-current PNP transistor with a low-voltage rating is required for audio or low-frequency power amplification. The TO-220AB package facilitates direct heatsink mounting via the collector flange, simplifying thermal design compared to isolated packages.

Single Bipolar Transistors Part Context

This transistor belongs to the Hitachi (now Renesas) 2SB857 series, designed specifically for use in low-frequency power amplifier applications. It is typically paired with complementary NPN devices such as the 2SD1133 or 2SD1134 to form balanced output stages in audio equipment and similar analog systems.