2SB886

Single Bipolar Transistors Overview

The Sanyo 2SB886 is a PNP power Darlington bipolar junction transistor housed in a TO-220AB package. It features a maximum collector current of 8A and a collector-emitter voltage rating of 100V. The device includes built-in bias resistors with a ratio of 0.03, simplifying drive circuitry. Key electrical parameters include a minimum DC current gain of 1500 at 4A/3V, a typical current gain bandwidth of 20MHz, and a maximum collector-base voltage of 110V. Operating temperatures range from -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• Integrated Darlington configuration with built-in bias resistor for simplified driving
• High DC current gain capability suitable for sensitive control applications
• Robust thermal performance with high maximum operating temperature

Single Bipolar Transistors Applications

• Relay drivers requiring high switching currents
• High-speed inverters and converters
• General large-current switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Sanyo documentation to confirm exact pinout and packaging variations. Ensure the component meets RoHS requirements if applicable to your design constraints. Cross-reference datasheet revision dates to confirm parameter consistency before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and integrated biasing are required to reduce external component count. The TO-220AB package provides adequate heat dissipation for continuous 8A operation. Evaluate thermal resistance requirements based on ambient conditions and duty cycle to ensure reliable performance within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the Sanyo power transistor family designed for robust switching applications. It utilizes epitaxial planar silicon technology to achieve high breakdown voltages and current handling capabilities. The device is engineered for reliability in industrial environments where stable amplification and switching are critical.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the PNP Darlington configuration, 100V VCEO, and 8A IC ratings. Verify equivalent hFE characteristics and TO-220AB compatibility. Consult manufacturer cross-reference lists for validated alternatives with identical electrical and mechanical specifications.