2SC1627A-O,PASF(M

Single Bipolar Transistors Overview

The Toshiba 2SC1627A is a silicon NPN epitaxial planar transistor utilizing the PCT process, designed for driver-stage and voltage amplifier applications. It features an absolute maximum collector-emitter voltage of 80 V and a collector current rating of 400 mA. The device provides a DC current gain ranging from 70 to 240 depending on the classification, with a transition frequency of 100 MHz. It operates within a junction temperature range up to 150 °C and is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Complementary pairing capability with the 2SA817A series
• Optimized for high-frequency performance with a 100 MHz transition frequency
• Robust thermal management supporting a 150 °C junction temperature limit

Single Bipolar Transistors Applications

• Driver-stage amplifiers for 30- to 35-watt audio systems
• General-purpose voltage amplifier circuits
• General electronics equipment including computers and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the hFE binning classification (O or Y) required for your circuit design before ordering. Ensure application designs adhere to the Toshiba Semiconductor Reliability Handbook regarding derating concepts under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for low-power audio driver stages requiring moderate voltage handling capabilities. The TO-92MOD package suits through-hole mounting for general consumer electronics. Evaluate the specific hFE classification needed for consistent gain performance across production batches. Consider the complementary 2SA817A PNP transistor if push-pull configurations are necessary for the amplifier topology.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup focused on general-purpose amplification tasks. It serves as a foundational active component for analog signal processing and power driving in consumer electronics. The device supports standard bipolar junction transistor topologies used in vintage and modern audio equipment designs.

Single Bipolar Transistors Replacement Considerations

The 2SA817A is documented as the direct complementary counterpart. Verify pinout compatibility and electrical parameter overlaps when substituting with other NPN transistors offering similar 80V ratings and 400mA current capacities.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (V(BR)CEO) is rated at 80 V.

How is the DC current gain classified?

The hFE is classified into two groups: O (70 to 140) and Y (120 to 240).

Is this component suitable for aerospace applications?

No, it is not intended for use in aerospace or other unintended uses requiring extraordinarily high reliability levels.