2SC2229-Y(SAN2,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-

SKU:812298fe3207 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SC2229-Y(SAN2,F,M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2229-Y(SAN2,F,M

Description：TRANS NPN 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2229-Y(SAN2,F,M

2SC2229-Y(SAN2,F,M

Single Bipolar Transistors Overview

The Toshiba 2SC2229 is a silicon NPN triple diffused transistor utilizing the PCT process. It features a collector-emitter breakdown voltage of 150 V and a maximum collector current of 50 mA. The device offers a typical transition frequency of 120 MHz and a low output capacitance of 5.0 pF. It operates within a junction temperature range up to 150 °C and dissipates up to 800 mW. Packaged in a JEDEC TO-92MOD (TO-92) long body, it provides high DC current gain with specific Y-classification ranges.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for robust switching performance
Low output capacitance suitable for high-frequency signal processing
High transition frequency enabling efficient operation at elevated speeds

Single Bipolar Transistors Applications

Black and White TV video output stages
High-voltage switching circuits
Driver stages for audio amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate compliance variations. Confirm the specific hFE classification suffix matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs. Ensure application conditions remain within absolute maximum ratings to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage handling in small-signal environments. The TO-92MOD package suits through-hole mounting constraints. Verify that the required DC current gain falls within the specified Y-classification limits. Consider the thermal dissipation capabilities relative to ambient operating temperatures.

Single Bipolar Transistors Part Context

This device belongs to the 2SC series of NPN transistors manufactured by Toshiba Semiconductor and Storage. It utilizes the PCT (Triple Diffused) process technology to achieve its electrical characteristics. The part is designed primarily for general electronics applications, including consumer equipment and industrial measuring devices.