Single Bipolar Transistors 2SC2235-O(T6ASN,FM product image

2SC2235-O(T6ASN,FM

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-

SKU:9fc0257fd249 Category: Brand:

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2SC2235-O(T6ASN,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-O(T6ASN,FM

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2235-O(T6ASN,FM

2SC2235-O(T6ASN,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-O(T6ASN,FM) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device provides a minimum DC current gain (hFE) of 80 at 100 mA, with a typical transition frequency of 120 MHz. Designed for audio power amplifier and driver stage applications, it operates within a junction temperature range up to 150 °C and dissipates up to 900 mW in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

  • Complementary pairing with the 2SA965 PNP transistor
  • High-voltage capability suitable for demanding amplifier stages
  • Optimized for low noise and high gain in audio circuits

Single Bipolar Transistors Applications

  • Audio power amplifier circuits
  • Driver stage amplification
  • General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific 'O' hFE classification (80 to 160) required by your circuit design against the datasheet specifications. Confirm RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Ensure the ordering suffix matches the exact packaging and marking requirements for your assembly line.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is needed to complement the 2SA965 PNP device in push-pull configurations. The 120 V breakdown voltage supports higher supply rails than standard small-signal transistors. Verify that the 800 mA current rating meets the peak load requirements of the intended amplifier topology.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2235 series of general-purpose NPN transistors designed primarily for audio applications. It utilizes Toshiba's proprietary PCT (Phase Change Technology) process to achieve stable performance characteristics. The series is widely recognized for its reliability in consumer electronics and home appliance audio systems.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is the designated complementary PNP counterpart. Other general-purpose NPN transistors with similar voltage and current ratings may serve as substitutes if electrical parameters align, though audio performance characteristics should be validated.

2SC2235-O(T6ASN,FM2SC2235-O(T6ASN,FM

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